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In a p-n junction, the depletion region is 400 nm wide and an electric field of \( \rm 5 \times 10 ^{5} Vm^{-1} \) exists in it. (a) Find the height of the potential barrier. (b) What should be the minimum kinetic energy of a conduction electron which can diffuse from the n-side to the p-side ?
The potential barrier existing across an unbiased p-n junction is 0.2 volt. What minimum kinetic energy a hole should have to diffuse from the p-side to the n-side if (a) the junction is unbiased, (b) the junction is forward-biased at 0.1 volt and (c) the junction is reverse-biased at 0.1 volt ?
In a p-n junction, a potential barrier of 250 meV exists across the junction. A hole with a kinetic energy of 300 meV approaches the junction. Find the kinetic energy of the hole when it crosses the junction if the hole approached the junction (a) from the p-side and (b) from the n-side.
When a p-n junction is reverse-biased, the current becomes almost constant at 25 μA. When it is forward-biased at 200 mV, a current of 75 μA is obtained. Find the magnitude of diffusion current when the diode is (a) unbiased, (b) reverse-biased at 200 mV and (c) forward-biased at 200 mV.
The drift current in a p-n junction is 20.0 μA. Estimate the number of electrons crossing a cross section per second in the depletion region.
The current–voltage characteristic of an ideal p-njunction diode is given by \[ \rm i = i_{0} ( e^{\frac{eV}{kT}} - 1 ) \] where the drift current \( \rm i_{0} \) equals 10 μA. Take the temperature T to be 300 K. (a) Find the voltage \( \rm V_{0} \) for which \( \rm e^{\frac{eV}{kT}} \) = 100. One can neglect the term 1 for voltages greater than this value. (b) Find an expression for the dynamic resistance of the diode as a function of V for \( \rm V > V_{0} \). (c) Find the voltage for which the dynamic resistance is 0.2 Ω.
Consider a p-n junction diode having the characteristic \[ \rm i = i_{0} ( e^{\frac{eV}{kT}} - 1 ) \] where \( \rm i_{0} \) = 20 μA. The diode is operated at T = 300 K. (a) Find the current through the diode when a voltage of 300 mV is applied across it in forward bias. (b) At what voltage does the current double?
Calculate the current through the circuit and the potential difference across the diode shown in figure (45-E1). The drift current for the diode is 20 μA.
Each of the resistances shown in figure (45-E2) has a value of 20 Ω. Find the equivalent resistance between A and B. Does it depend on whether the point A or B is at higher potential?